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Creators/Authors contains: "Lee, Seungyeop"

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  1. ; ; (, The Journal of Physical Chemistry C)
    Vacancy and substitution defects in boron nitrides display quantum emission properties promising for various technological applications in biosensing, imaging, telecommunications, and quantum optical computing. However, such atomic defects and their associated properties have thus far been limited to the ultraviolet and visible spectral range. In this work, we explored sp3-hybridized defect pairs in boron nitrides using density functional theory and found that optically active defect transitions can occur in the infrared with a high oscillator strength that is 6.5 times as high as that of boron nitride’s band gap transition. This phenomenon was observed in nanotubular and hexagonal boron nitrides, suggesting that these IR properties of sp3 defects can generally be found in boron nitrides. 
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